High-Power Solid-State Switches (Integrated Power Modules)
This Integrated Power Module (IPM) by Eagle Harbor Technologies (EHT) simplifies high-current, high frequency, solid-state switching. The IPM features a solid-state switch, fiber optically isolated gate drive, freewheeling diodes, fast capacitors, snubbers, and crowbar diodes. It is housed in a 3U chassis.
EHT’s precision gate drive produces clean switching waveforms. The low jitter (< 5 ns) gate drive allows units to be operated in parallel to drive high currents to the load. The precision gate drive produces very fast switch transitions, which significantly decreases the switching losses. Our patented IPM is the most efficient high frequency IPM available.
Extremely robust, the EHT IPM resists EMI noise and operates in difficult laboratory and experiment environments. Onboard voltage monitoring warns of malfunction or overvoltage. Optional built-in snubbers and freewheeling diodes protect against reverse currents and inductive voltage spikes.
The EHT IPM is at its best when driving high current coils to produce magnetic fields for industrial and research uses, where the switch can be closed to ring current through a coil or pulsed width modulated to maintain a flat top. These units can be operated in parallel to drive higher currents in a one coil, or to synchronize multiple coils.
The IPM can be used to produce atmospheric pressure plasma jets, pulse width modulation when driving high current magnets, and electromagnetic coil driving.
Main Features
Very low switching losses
Fast rise and fall times
Pulse width to 100 ns
Control logic powered by 120 VAC, isolated to 5 kV (10 pF)
3U rack mount
Fault detection with fiber optic output (optional)
Example Specifications
Maximum voltage: 1200 V
High frequency: DC to 5 MHz
Each pulse current: 10 kA
Continuous current sample: 500 A at 30 kHz and 50% duty cycle (air cooled)
Burst example: 2.5 kA at 100 kHz and 50% duty cycle for 10 ms
High power achieved with silicon carbide parts and or water cooling
Applications
High current magnet driver
Precision PWM control
Resonant power conversion
Efficient switching power supplies
Tube replacements
High power MOSFET alternative
Example Application: High Current Magnet Driver with Pulse Width Modulation Capabilities
Consider a power supply that switches 40 kA at 100 kHz PWM and drives an inductive load (electromagnet coils). The supply consits of sixteen IPM-16PPs operating in parallel at 2.5 kA per module for 10 ms. In the figure, the collector-emitter voltage of the IGBT (Ch2) and the current in the load (Ch3) can be seen. During the pulse, the pulse width was altered to change the current.
High-power solid-state power supply: parallel operation, high current and high frequency capabilities.
The parallel operation, high current and high frequency capabilities of the IPMs can be clearly seen. High switching frequencies and precise pulse width resolution allow for much finer PWM control than other solid-state-based PWM power supplies.
Electrical Specifications
Absolute maximum voltage: 1200 V
Recommended operating voltage: 800 V
Current specifications:
Single pulse current: 10 kA
Burst example: 2.5 kA at 100 kHz and 50% duty cycle for 10 ms
Continuous current: 500 A at 30 kHz and 50% duty cycle (air cooled)
Rise/fall times: 10 ns (load dependent)
Pulse widths: 100 ns – continuous
Mechanical Specifications
Chassis size: 14.25" × 17.5" × 5.25" (3U)
Weight: 25 lb
Rack mountable
Fiber-Optically Isolated Gate Drive
EHT’s patented precision gate drive produces clean switching waveforms. The low jitter gate (< 5 ns) drive allows these units to be operated in parallel to drive even higher currents into your load. The precision gate drive produces very fast switch transitions, which significantly decreases the switching losses. At high frequency operation, they are significantly more efficient than competing switches on the market (FT-1 is included)
Other Features
Fault detection with fiber optic output (optional)
All control voltages are produced from 120 VAC that is isolated to 5 kV (10 pF)
Resistant to EMI noise and can operate in harsh laboratory/experimental environments
Solid-State Switch Additional Option
IGBT: Higher current carrying capability, faster rise times
SiC MOSFET: Increased efficiency, less thermal management required
Other Additional Options
Crowbar diodes: Allows for high current operation into inductive loads
Snubbers: Can be customized for a given application
