The EHT Semi plasma products achieve the highest semiconductor fabrication etch quality with precision control of the ion energy distribution (IED) at lowest minimum critical dimensions, yet with etching rates comparable to RF generators.
Our product range for semiconductor fabrications is summarized in the following table. Click any link for further information:
Model | Applications | Uni- or Bipolar | maximums: | MHz | ||
kV | kW | A | ||||
Spartan™ | Wafer bias, Chucking | Unipolar | 14 | 20 | 175 | 600 |
Hoplite™ | Wafer bias, Chucking | Unipolar | 18 | 5 | 130 | 600 |
Perseus™ | Wafer bias | Bipolar | 16 | 20 | 110 | 600 |
Mid-Freq. RF™ | Wafer bias, Plasma generation | Bipolar | 25 | 100 | 3 кА | 1 |
High-Freq. RF™ | Wafer bias, Plasma generation | Bipolar | 10 | 20 | кА | 15 |
Spartan 20 kW, 175 A, and 80-600 kHz Unipolar Pulse Generator. Matching network not required – reduces complexity. Improved ion energy distribution control leads to improved etch quality. Fast pulse rise time optimizes wafer on-time (time wafer spends at nonzero voltages). Retrofit older processing tools to upgrade capabilities.
More…Hoplite™ 5 kW, 0-18 kV, 130 A und 80-600 kHz Unipolarer Impulsgenerator. Matching network not required – reduces complexity; Improved ion energy distribution control leads to improved etch quality; Fast pulse rise time optimizes wafer on-time (time wafer spends at nonzero voltages).
More…Perseus 20 kW, 600 kHz, 110 A, and 0-16 kV Bipolar Pulse Generator. Programmable ion energy distribution leads to higher etch performance. Manufacture high-aspect-ratio structures and smaller critical dimensions. Real-time wafer voltage and IED calculated from internal measurements of bias voltage and current.
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