Servers and Data Acquisition

EHT Products for Semiconductor Fabrication

Highest Precision Ion Energy Distribution (IED) | Wafer Bias | Chucking | Plasma Generation

Unipolar and Bipolar| Tightly Controlled Wafer Voltages | Narrow Ion Energy Distributions (IED) | Small Critical Dimensions.

The EHT Semi plasma products achieve the highest semiconductor fabrication etch quality with precision control of the ion energy distribution (IED) at lowest minimum critical dimensions, yet with etching rates comparable to RF generators.

Our product range for semiconductor fabrications is summarized in the following table. Click any link for further information:

Model	Applications	Uni- or Bipolar	maximums:			MHz
Model	Applications	Uni- or Bipolar	kV	kW	A	MHz
Spartan™	Wafer bias, Chucking	Unipolar	14	20	175	600
Hoplight™	Wafer bias, Chucking	Unipolar	18	5	130	600
Perseus™	Wafer bias	Bipolar	16	20	110	600
Mid-Freq. RF™	Wafer bias, Plasma generation	Bipolar	25	100	3 кА	1
High-Freq. RF™	Wafer bias, Plasma generation	Bipolar	10	20	кА	15

Spartan

Spartan – Sky Blue Microsystems GmbH

Spartan 20 kW, 175 A, and 80-600 kHz Unipolar Pulse Generator. Matching network not required – reduces complexity. Improved ion energy distribution control leads to improved etch quality. Fast pulse rise time optimizes wafer on-time (time wafer spends at nonzero voltages). Retrofit older processing tools to upgrade capabilities.

Hoplite

Hoplite – Sky Blue Microsystems GmbH

Hoplite™ 5 kW, 0-18 kV, 130 A und 80-600 kHz Unipolarer Impulsgenerator. Matching network not required – reduces complexity; Improved ion energy distribution control leads to improved etch quality; Fast pulse rise time optimizes wafer on-time (time wafer spends at nonzero voltages).

Perseus

Perseus – Sky Blue Microsystems GmbH

Perseus 20 kW, 600 kHz, 110 A, and 0-16 kV Bipolar Pulse Generator. Programmable ion energy distribution leads to higher etch performance. Manufacture high-aspect-ratio structures and smaller critical dimensions. Real-time wafer voltage and IED calculated from internal measurements of bias voltage and current.