Servers and Data Acquisition

EHT Semi Mid-Frequency RF™ | Wafer Bias | 25 kV, 100 kW, 3 kA, 1 MHz

Bipolar | Tightly Controlled Wafer Voltages | Narrow Ion Energy Distributions (IED) | Small Critical Dimensions

EHT Semi “Mid-Frequency RF™” Matchless RF Generator

EHT Semi matchless RF Generators bring new advantages to the semiconductor industry.
Higher voltage compared with existing RF generators.
Higher power levels can translate to faster etching.
Eliminating the matching network is required, reducing complexity and size.
Voltage, power, and duty cycle are all tunable in real time.
Mid-Frequency Matchless RF Generator.

Application:

Plasma generator (ICP and CCP) & wafer bias

Benefits

Very low impedance drive direct couples to plasma
Matching network not required – reduces complexity
No reflected power
Highly controllable and precise output. Both pulsed or continuous operation possible
Arc and fault protection
Fast feedback and control or preprogrammed control possible (< 10 μs)

Electrical spec

Output voltage: > 25 kV
Waveform type: bipolar RF
Peak output current: 3 kA
Frequency: 100 kHz - 1 MHz
Peak power can be > 100 kW

Mid-Frequency Matchless RF 100 kW, 100 kHz - 1 MHz, 3 kA, and 25 kV Generator with very low impedance drive direct couples to plasma. — Mid-Frequency Matchless RF 100 kW, 100 kHz - 1 MHz, 3 kA, and 25 kV Generator.

Mid-Frequency Matchless RF Generator Waveform with 200 µs pulses of 400 kHz RF burst mode and more than 25 kV output voltage. — Mid-Frequency Matchless RF Generator Waveform with 200 µs pulses of 400 kHz RF burst mode.