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EHT Semi Mid-Frequency RF™ | Wafer Bias | 25 kV, 100 kW, 3 kA, 1 MHz
Bipolar | Tightly Controlled Wafer Voltages | Narrow Ion Energy Distributions (IED) | Small Critical Dimensions
EHT Semi “Mid-Frequency RF™” Matchless RF Generator
- EHT Semi matchless RF Generators bring new advantages to the semiconductor industry.
- Higher voltage compared with existing RF generators.
- Higher power levels can translate to faster etching.
- Eliminating the matching network is required, reducing complexity and size.
- Voltage, power, and duty cycle are all tunable in real time.
- Mid-Frequency Matchless RF Generator.
Application:
Plasma generator (ICP and CCP) & wafer bias
Benefits
- Very low impedance drive direct couples to plasma
- Matching network not required – reduces complexity
- No reflected power
- Highly controllable and precise output. Both pulsed or continuous operation possible
- Arc and fault protection
- Fast feedback and control or preprogrammed control possible (< 10 μs)
Electrical spec
- Output voltage: > 25 kV
- Waveform type: bipolar RF
- Peak output current: 3 kA
- Frequency: 100 kHz - 1 MHz
- Peak power can be > 100 kW