EHT Semi Perseus™ | Wafer Bias | 16 kV, 20 kW, 110 A, 600 MHz

Bipolar | Tightly Controlled Wafer Voltages | Narrow Ion Energy Distributions (IED) | Small Critical Dimensions

EHT Semi "Perseus™":

• Programmable ion energy distribution leads to higher etch performance
• Manufacture high-aspect-ratio structures and smaller critical dimensions
• Real-time wafer voltage and IED calculated from internal measurements of bias voltage and current. More info: Real-Time Voltage and Ion Energies
• Active energy recovery minimizes wafer voltage droop, improves efficiency, and enables fast control of ion energy distribution
• Continuously-adjustable multistate operation More info: Multistate
• Matching network not required – reduces complexity
• Perseus™ is an ideal choice for building out new state-of-the-art 300 mm processing facilities or retrofitting older 200 mm systems

Maximum Electrical Specifications

• Output voltage: 0-16 kV
• Waveform type: bipolar
• Peak output current: 110 A
• Max pulse repetition frequency: 600 kHz
• Max average input power: 20 kW
• Peak efficiency: > 80% (load dependent)

Controller Options

An optional EHT controller allows for TCP/IP or EtherCat® communication. Other industrial protocols can be rapidly developed if needed. Alternatively, the pulse width and pulse repetition frequency can be controlled directly via fiber and an external signal generator.

Output Voltage Control (Multistate)

Output voltage can be adjusted on two timescales. For pulse-to-pulse adjustments, the pulse width can be reduced, which charges the load capacitance to a lower voltage. On longer timescales, the external DC supply set point can be changed.

Internal Sensor Suite

• Cooling water flow rate
• Cooling water inlet temperature
• Cooling water outlet temperature
• Internal leak sensor
• Cold plate threshold temperature
• Output voltage (voltage-divided, 1:4000 into a 50 Ω termination; otherwise 1:2000)
• Output current (0.5 V/A into 50 Ω terminator)