EHT Semi Perseus™ | Wafer Bias | 16 kV, 20 kW, 110 A, 600 MHz.

Bipolar | Tightly Controlled Wafer Voltages | Narrow Ion Energy Distributions (IED) | Small Critical Dimensions.

Programmable ion energy distribution leads to higher etch performance
Manufacture high-aspect-ratio structures and smaller critical dimensions
Real-time wafer voltage and IED calculated from internal measurements of bias voltage and current. More info: Real-Time Voltage and Ion Energies
Active energy recovery minimizes wafer voltage droop, improves efficiency, and enables fast control of ion energy distribution
Continuously-adjustable multistate operation More info: Multistate
Matching network not required – reduces complexity
Perseus™ is an ideal choice for building out new state-of-the-art 300 mm processing facilities or retrofitting older 200 mm systems

An optional EHT controller allows for TCP/IP or EtherCat® communication. Other industrial protocols can be rapidly developed if needed. Alternatively, the pulse width and pulse repetition frequency can be controlled directly via fiber and an external signal generator.

Output voltage can be adjusted on two timescales. For pulse-to-pulse adjustments, the pulse width can be reduced, which charges the load capacitance to a lower voltage. On longer timescales, the external DC supply set point can be changed.

Cooling water flow rate
Cooling water inlet temperature
Cooling water outlet temperature
Internal leak sensor
Cold plate threshold temperature
Output voltage (voltage-divided, 1:4000 into a 50 Ω termination; otherwise 1:2000)
Output current (0.5 V/A into 50 Ω terminator)