EHT Semi Spartan™ | Wafer Bias | Chucking | 14 kV, 20 kW, 175 A, 600 MHz

Unipolar | Tightly Controlled Wafer Voltages | Narrow Ion Energy Distributions (IED) | Small Critical Dimensions

EHT Semi „Spartan™“:

• Matching network not required – reduces complexity
• Improved ion energy distribution control leads to improved etch quality
• Fast pulse rise time optimizes wafer on-time (time wafer spends at nonzero voltages)
• Retrofit older processing tools to upgrade capabilities

Specifications

• Output voltage: 0-14 kV
• Peak output current: 175 A
• Max average input power: 20 kW
• Frequency: 80-600 kHz
• Peak efficiency: > 80% (load dependent)
• Controller: TCP/IP or EtherCat® communication

Controller Options

• An optional EHT controller allows for TCP/IP or EtherCAT control. Other industrial protocols can be rapidly developed if needed. Alternatively, the pulse width and pulse repetition frequency can be controlled directly via fiber and an external signal generator.

Output Voltage Control

• Output voltage can be adjusted on two timescales. For pulse-to-pulse adjustments, the pulse width can be reduced, which charges the load capacitance to a lower voltage. On longer timescales, the external DC supply set point can be changed.

Internal Sensor Suite

• Cooling water flow rate
• Cooling water inlet temperature
• Cooling water outlet temperature
• Internal leak sensor
• Component and cold plate threshold temperature
• Output voltage (voltage-divided, 1:4000 into a 50 Ω termination; otherwise 1:2000)
• Output current (0.5 V/A into 50 Ω terminator)